Floating-Gate Programming Papers
FG = Floating-Gate
- Starting paper on FG Device Concept of
a device that simultaniously stores a value, computes, and adapts.
Introduction of the term Single-Transistor Learning Synapse (STLS).
P. Hasler, C. Diorio, B. Minch, and C. Mead,
"Single transistor learning synapse with long term storage,"
IEEE International Symposium on Circuits and Systems , vol. 3, May 1995, pp. 1660-1663.
- Short journal paper showing the analytical model of hot-electron injection
from Boltzman transport as well as the resulting experimental data
to the measurements.
P. Hasler, A. Andreou, C. Diorio, B. A. Minch, and C. Mead,
"Impact ionization and hot-electron injection derived consistently from boltzman transport,"
VLSI Design, vol. 8, pp. 455-461, 1998.
Overview paper of early FG physics and basic circuits.
P. Hasler, B. Minch, and C. Diorio,
"Adaptive circuits using pFET
in Advanced Research in VLSI,
21-24 March 1999, pp. 215-229.
- First paper discussing an automated programming algorithm and infrastructure
for general FG circuits.
M. Kucic, A. Low, P. Hasler, and J. Neff,
"A programmable continuous-time
floating-gate fourier processor,"
IEEE Transactions on Circuits and Systems
II: Analog and Digital Signal Processing, vol. 48, no. 1, pp. 90-99, Jan
- Updated discussion on automated programming algorithms and infrastructure,
including the movement to an embedded FPGA board controller.
G. Serrano, P. D. Smith, H. J. Lo, R. Chawla, T. S. Hall, C. M. Twigg, and
"Automatic rapid programming of large arrays of floating-gate
elements," International Symposium on Circuits and Systems, vol 1, May 2004,
- Modeling and experimental data paper on targeted programming of
FG devices, unifying many approaches into a routine approach.
A. Bandyopadhyay, G. Serrano, and P. Hasler,
"Adaptive algorithm using
hot-electron injection for programming analog computational memory elements
within 0.2 percent of accuracy over 3.5 decade,"
IEEE Journal of
Solid-State Circuits, vol. 41, no. 9, pp. 2107-2114, Sept. 2006.
- Device Physcis Modeling of Hot-electron Injection for
subthreshold and above-threshold FG devices.
P. Hasler, A. Basu, and S. Kozoil,
"Above threshold pFET injection modeling
intended for programming floating-gate systems,"
IEEE International Symposium on Circuits and Systems, May 2007, pp. 1557 - 1560.
- First fully integrated FG programming infrastructure
to enable an all digital programming infrastructure.
This programming infrastructure is the primary approach enabling FPAA devices
(starting RASP 2.8 to present).
Arindam Basu and Paul E. Hasler,
"A Fully Integrated Architecture for
Fast and Accurate Programming of Floating Gates over Six decades of Current,"
IEEE Transactions on VLSI,
Vol. 19, No. 6, June 2011. pp. 953-962.